Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode

I. Min Chan, Tsung Yi Hsu, Franklin C. Hong

研究成果: Article同行評審

211 引文 斯高帕斯(Scopus)

摘要

An ultrathin layer of nickel oxide (NiO) was deposited on the indium tin oxide (ITO) anode to enhance the hole injections in organic light-emitting diode (OLED) devices. A very low turn-on voltage (3 V) was actually observed for the device with NiO on ITO. The enhancement of hole injections by depositing NiO on the ITO anode was further verified by the hole-only devices. The excellent hole-injection ability of NiO was also demonstrated by devising a device with patterned NiO on the ITO anode. Our results suggest that the NiO/ITO anode is an excellent choice to enhance hole injections of OLED devices.

原文English
頁(從 - 到)1899-1901
頁數3
期刊Applied Physics Letters
81
發行號10
DOIs
出版狀態Published - 2002 九月 2

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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