Enhanced hot-carrier induced degradation in pMOSFETs stressed under high gate voltage

Jone-Fang Chen, Chih Pin Tsao, T. C. Ong

研究成果: Conference article同行評審

摘要

Enhanced hot-carrier induced drain current degradation under high gate voltage stress is observed in pMOSFETs. Electron tunneling from the gate plus Auger recombination assisted hot-hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide, or devices operated under higher temperature or lower drain voltage.

原文English
頁(從 - 到)230-233
頁數4
期刊Biennial University/Government/Industry Microelectronics Symposium - Proceedings
出版狀態Published - 2003 九月 1
事件15th Biennial University/Government/Industry Microelectronics Symposium - Boise, ID, United States
持續時間: 2003 六月 302003 七月 2

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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