Enhanced hot-carrier induced drain current degradation under high gate voltage stress is observed in pMOSFETs. Electron tunneling from the gate plus Auger recombination assisted hot-hole energy gain process is responsible for this phenomenon. This enhancement in drain current degradation is more severe for devices with thinner gate oxide, or devices operated under higher temperature or lower drain voltage.
|頁（從 - 到）||230-233|
|期刊||Biennial University/Government/Industry Microelectronics Symposium - Proceedings|
|出版狀態||Published - 2003 九月 1|
|事件||15th Biennial University/Government/Industry Microelectronics Symposium - Boise, ID, United States|
持續時間: 2003 六月 30 → 2003 七月 2
All Science Journal Classification (ASJC) codes