@article{90c4aa4cb02d4e0fafa2e1748a4aa4fa,
title = "Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's",
abstract = "Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.",
author = "Chen, {Jone F.} and Kazunari Ishimaru and Chenming Hu",
note = "Funding Information: Manuscript received April 2, 1998; revised June 9, 1998. This work was supported in part by the Office of Naval Research, Contract FDN00014-96-1-0369. J. F. Chen and C. Hu are with the Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA. K. Ishimaru is with the Toshiba Corporation, Yokohama 235, Japan. Publisher Item Identifier S 0741-3106(98)06629-4.",
year = "1998",
month = sep,
doi = "10.1109/55.709632",
language = "English",
volume = "19",
pages = "332--334",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}