Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's

Jone F. Chen, Kazunari Ishimaru, Chenming Hu

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Enhanced hot-carrier induced current degradation in narrow channel PMOSFET's with shallow trench isolation structure is observed. This phenomenon is not due to the increase in gate current, but the result of the increase in the electron trapping efficiency of the gate oxide. Mechanical stress may be responsible for the enhanced electron trapping efficiency.

原文English
頁(從 - 到)332-334
頁數3
期刊IEEE Electron Device Letters
19
發行號9
DOIs
出版狀態Published - 1998 九月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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