Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts

Shu Yen Liu, Jhao Cheng Ye, Yu Chuan Lin, Kuo Hua Chang, Ming Lun Lee, Wei Chih Lai, Jinn Kong Sheu

研究成果: Conference contribution

摘要

To enhance the efficiency of photogenerated electron collection in the n-type working electrode, Indium Tin oxide (ITO) finger-type ohmic contacts were immersed in NaCl electrolyte because ITO is a well-known transparent and conductive optical film and the ITO/n-GaN contact exhibited ohmic property when the carrier concentration of n-GaN were close to 1×1019/cm 3. We found that the performances of the n-GaN photoelectrochemical cells with finger-type ITO ohmic contacts in photocurrent densities and hydrogen gas generation rates were both better than the n-GaN without finger-type ITO ohmic contacts. Related analyses have been performed and will be presented in this paper to explain the possible mechanism from the point of view of electrochemical analysis. Besides, after the photoelectrochemical measurements we observed that the adhesion of ITO/n-GaN contacts was pretty good. Finally, we did the surface analysis by scanning electron microscope (SEM) before and after the photoelectrochemical measurements to conform the surface morphology of ITO almost did not change in the NaCl electrolyte. This indicates that ITO is a good candidate material for the immersed ohmic contact in water splitting system.

原文English
主出版物標題Gallium Nitride Materials and Devices VI
DOIs
出版狀態Published - 2011 五月 13
事件Gallium Nitride Materials and Devices VI - San Francisco, CA, United States
持續時間: 2011 一月 242011 一月 27

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7939
ISSN(列印)0277-786X

Other

OtherGallium Nitride Materials and Devices VI
國家United States
城市San Francisco, CA
期間11-01-2411-01-27

指紋

Ohmic contacts
Tin oxides
indium oxides
Indium
tin oxides
Hydrogen
Oxides
electric contacts
Gases
Contact
hydrogen
gases
Electrolyte
Electrolytes
electrolytes
Photoelectrochemical cells
Optical films
Conductive films
water splitting
Surface Morphology

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此文

Liu, S. Y., Ye, J. C., Lin, Y. C., Chang, K. H., Lee, M. L., Lai, W. C., & Sheu, J. K. (2011). Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts. 於 Gallium Nitride Materials and Devices VI [793925] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7939). https://doi.org/10.1117/12.876436
Liu, Shu Yen ; Ye, Jhao Cheng ; Lin, Yu Chuan ; Chang, Kuo Hua ; Lee, Ming Lun ; Lai, Wei Chih ; Sheu, Jinn Kong. / Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts. Gallium Nitride Materials and Devices VI. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).
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title = "Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts",
abstract = "To enhance the efficiency of photogenerated electron collection in the n-type working electrode, Indium Tin oxide (ITO) finger-type ohmic contacts were immersed in NaCl electrolyte because ITO is a well-known transparent and conductive optical film and the ITO/n-GaN contact exhibited ohmic property when the carrier concentration of n-GaN were close to 1×1019/cm 3. We found that the performances of the n-GaN photoelectrochemical cells with finger-type ITO ohmic contacts in photocurrent densities and hydrogen gas generation rates were both better than the n-GaN without finger-type ITO ohmic contacts. Related analyses have been performed and will be presented in this paper to explain the possible mechanism from the point of view of electrochemical analysis. Besides, after the photoelectrochemical measurements we observed that the adhesion of ITO/n-GaN contacts was pretty good. Finally, we did the surface analysis by scanning electron microscope (SEM) before and after the photoelectrochemical measurements to conform the surface morphology of ITO almost did not change in the NaCl electrolyte. This indicates that ITO is a good candidate material for the immersed ohmic contact in water splitting system.",
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Liu, SY, Ye, JC, Lin, YC, Chang, KH, Lee, ML, Lai, WC & Sheu, JK 2011, Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts. 於 Gallium Nitride Materials and Devices VI., 793925, Proceedings of SPIE - The International Society for Optical Engineering, 卷 7939, Gallium Nitride Materials and Devices VI, San Francisco, CA, United States, 11-01-24. https://doi.org/10.1117/12.876436

Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts. / Liu, Shu Yen; Ye, Jhao Cheng; Lin, Yu Chuan; Chang, Kuo Hua; Lee, Ming Lun; Lai, Wei Chih; Sheu, Jinn Kong.

Gallium Nitride Materials and Devices VI. 2011. 793925 (Proceedings of SPIE - The International Society for Optical Engineering; 卷 7939).

研究成果: Conference contribution

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AU - Liu, Shu Yen

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AU - Lee, Ming Lun

AU - Lai, Wei Chih

AU - Sheu, Jinn Kong

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N2 - To enhance the efficiency of photogenerated electron collection in the n-type working electrode, Indium Tin oxide (ITO) finger-type ohmic contacts were immersed in NaCl electrolyte because ITO is a well-known transparent and conductive optical film and the ITO/n-GaN contact exhibited ohmic property when the carrier concentration of n-GaN were close to 1×1019/cm 3. We found that the performances of the n-GaN photoelectrochemical cells with finger-type ITO ohmic contacts in photocurrent densities and hydrogen gas generation rates were both better than the n-GaN without finger-type ITO ohmic contacts. Related analyses have been performed and will be presented in this paper to explain the possible mechanism from the point of view of electrochemical analysis. Besides, after the photoelectrochemical measurements we observed that the adhesion of ITO/n-GaN contacts was pretty good. Finally, we did the surface analysis by scanning electron microscope (SEM) before and after the photoelectrochemical measurements to conform the surface morphology of ITO almost did not change in the NaCl electrolyte. This indicates that ITO is a good candidate material for the immersed ohmic contact in water splitting system.

AB - To enhance the efficiency of photogenerated electron collection in the n-type working electrode, Indium Tin oxide (ITO) finger-type ohmic contacts were immersed in NaCl electrolyte because ITO is a well-known transparent and conductive optical film and the ITO/n-GaN contact exhibited ohmic property when the carrier concentration of n-GaN were close to 1×1019/cm 3. We found that the performances of the n-GaN photoelectrochemical cells with finger-type ITO ohmic contacts in photocurrent densities and hydrogen gas generation rates were both better than the n-GaN without finger-type ITO ohmic contacts. Related analyses have been performed and will be presented in this paper to explain the possible mechanism from the point of view of electrochemical analysis. Besides, after the photoelectrochemical measurements we observed that the adhesion of ITO/n-GaN contacts was pretty good. Finally, we did the surface analysis by scanning electron microscope (SEM) before and after the photoelectrochemical measurements to conform the surface morphology of ITO almost did not change in the NaCl electrolyte. This indicates that ITO is a good candidate material for the immersed ohmic contact in water splitting system.

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Liu SY, Ye JC, Lin YC, Chang KH, Lee ML, Lai WC 等. Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts. 於 Gallium Nitride Materials and Devices VI. 2011. 793925. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.876436