Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system

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23 引文 斯高帕斯(Scopus)

摘要

The MgZnO/ZnO/MgZnO double heterostructure was deposited at low temperature by a vapor cooling condensation system to enhance the light emission of the ultraviolet p-AlGaN/i-MgZnO/i-ZnO/i-MgZnO/n-ZnO:In light-emitting diodes (ULEDs). The defect and vacancy concentrations of the deposited films were effectively reduced. The peak intensity and total emission power of the ultraviolet electroluminescence (EL) spectra of the ULEDs were 3.08 times and 1.82 times higher than those of the p-AlGaN/i-ZnO/n-ZnO:In ULEDs, respectively. Furthermore, the visible EL emission intensity induced by defect and vacancy in the ULEDs was negligible due to the high performances of the deposited active i-ZnO films.

原文English
文章編號131116
期刊Applied Physics Letters
100
發行號13
DOIs
出版狀態Published - 2012 三月 26

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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