We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.
|出版狀態||Published - 2014|
|事件||2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China|
持續時間: 2013 十月 26 → 2013 十一月 1
|Other||2nd International Conference on Innovation, Communication and Engineering, ICICE 2013|
|期間||13-10-26 → 13-11-01|
All Science Journal Classification (ASJC) codes