Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

X. F. Zeng; S. J. Chang; Shih Chang Shei

Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

X. F. Zeng, S. J. Chang, Shih Chang Shei

微電子工程研究所

研究成果: Paper › 同行評審

摘要

We reported the SiO₂ nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO₂ as an etching mask before ICP etching SiO₂ by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO₂ nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO₂ nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO₂ nanopillars were increasing cause more rough on the surface of GaN-based LEDs.

原文	English
頁面	265-268
頁數	4
出版狀態	Published - 2014
事件	2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China 持續時間: 2013 10月 26 → 2013 11月 1

Other

Other	2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
國家/地區	China
城市	Qingdao
期間	13-10-26 → 13-11-01

All Science Journal Classification (ASJC) codes

技術與創新管理

其它文件與鏈接

引用此

@conference{cfc7d81e23ca477fb885b294d853a150,

title = "Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface",

abstract = "We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.",

author = "Zeng, {X. F.} and Chang, {S. J.} and Shei, {Shih Chang}",

note = "Copyright: Copyright 2014 Elsevier B.V., All rights reserved.; 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 ; Conference date: 26-10-2013 Through 01-11-2013",

year = "2014",

language = "English",

pages = "265--268",

}

TY - CONF

T1 - Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

AU - Zeng, X. F.

AU - Chang, S. J.

AU - Shei, Shih Chang

PY - 2014

Y1 - 2014

N2 - We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.

AB - We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.

UR - http://www.scopus.com/inward/record.url?scp=84896633183&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896633183&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84896633183

SP - 265

EP - 268

T2 - 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013

Y2 - 26 October 2013 through 1 November 2013

ER -

Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

摘要

Other

All Science Journal Classification (ASJC) codes

其它文件與鏈接

指紋

引用此