Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

X. F. Zeng, Shoou-Jinn Chang, Shih Chang Shei

研究成果: Paper

摘要

We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%-49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.

原文English
頁面265-268
頁數4
出版狀態Published - 2014 一月 1
事件2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China
持續時間: 2013 十月 262013 十一月 1

Other

Other2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
國家China
城市Qingdao
期間13-10-2613-11-01

指紋

Light emitting diodes
Etching
Masks
Nanoparticles
Adsorption

All Science Journal Classification (ASJC) codes

  • Management of Technology and Innovation

引用此文

Zeng, X. F., Chang, S-J., & Shei, S. C. (2014). Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface. 265-268. 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.
Zeng, X. F. ; Chang, Shoou-Jinn ; Shei, Shih Chang. / Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface. 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.4 p.
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abstract = "We reported the SiO2 nanopillars and microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR), and the different heights of SiO2 nanopillars on microroughened ITO were obtained after etching. Compared to a regular (flat-surface) GaN-based LED, the light-output power for a LED with microroughening was increased by 33{\%}. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7{\%}-49.1{\%} at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars were increasing cause more rough on the surface of GaN-based LEDs.",
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Zeng, XF, Chang, S-J & Shei, SC 2014, 'Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface' 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China, 13-10-26 - 13-11-01, 頁 265-268.

Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface. / Zeng, X. F.; Chang, Shoou-Jinn; Shei, Shih Chang.

2014. 265-268 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.

研究成果: Paper

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Zeng XF, Chang S-J, Shei SC. Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface. 2014. 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.