Enhanced light extraction in wafer-bonded p-side-up thin-film AlGaInP light emitting diodes via zinc oxide nanorods

Ming Chun Tseng, Dong Sing Wuu, Chi Lu Chen, Hsin Ying Lee, Yu Chang Lin, Ray Hua Horng

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

ZnO nanorods grown via hydrothermal method on the aluminum-doped zinc oxide (AZO) thin film were used to fabricate high-brightness p-side-up thin-film AlGaInP lightemitting diodes (LEDs). The AZO thin film was not only used as current spreading layers but also as a seed layer of ZnO nanorods. The AZO thin film was prepared using atomic layer deposition. The ZnO nanorods improved light extraction, thus increasing the light output power of the LEDs. The output powers of LEDs with optimum ZnO nanorod structures were increased by 32% at an injection current of 700 mA, as compared with that of an LED with AZO thin film. The emission wavelength shifts of LEDs with an AZO thin film and optimum ZnO nanorod structure were 18 and 11 nm, respectively, when the injection current was increased from 20 to 1000 mA. The ZnO nanorods not only provide more light extraction but also keep the thermal stability of the LED device without any degradation. The results are promising for the developed high brightness AlGaInP LED applications with low fabrication cost through ZnO nanorods grown by hydrothermal method to enhance the light extraction efficiency.

原文English
頁(從 - 到)3293-3302
頁數10
期刊Optical Materials Express
6
發行號10
DOIs
出版狀態Published - 2016

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料

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