Enhanced light output of AIGalnP light emitting diodes using an indium-zinc oxide transparent conduction layer and electroplated metal substrate

Der Ming Kuo, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Wei Chi Lee, Pei Ren Wang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The use of indium-zinc oxide (IZO) as a transparent conduction layer (TCL) for electroplated nickel metal substrate AIGalnP light-emitting diodes with a 300 × 300 μm2 chip size was investigated with regard to both fabrication and effectiveness in improving light extraction efficiency. A metal system consisting of AuGe/Au was deposited to form ohmic contact dots for the n+-GaAs layer, and then an IZO film was deposited to serve as a TCL. Compared with conventional light emitting diodes (LEDs) with GaAs substrates, the proposed LEDs show an increase in light output power (i.e., δL op/Lop) by 116.7% at 20 mA and 168.9% at 100 mA.

原文English
文章編號012101
期刊Applied Physics Express
4
發行號1
DOIs
出版狀態Published - 2011 一月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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