Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

J. K. Sheu, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, G. C. Chi

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.

原文English
文章編號5967887
頁(從 - 到)1400-1402
頁數3
期刊IEEE Electron Device Letters
32
發行號10
DOIs
出版狀態Published - 2011 十月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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