Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer

Chun Ju Tun, Jinn Kong Sheu, Bao Jen Pong, Min Lum Lee, Ming Yu Lee, Cheng Kang Hsieh, Ching Chung Hu, Gou Chung Chi

研究成果: Article同行評審

80 引文 斯高帕斯(Scopus)

摘要

In this study, Al-doped ZnO (AZO) Ni-AZO and NiOx-AZO films were deposited on p-type GaN films. The depositions were followed by thermal annealing to form Ohmic contacts. The p-GaN-AZO contacts exhibited a non-Ohmic electrical characteristic. However, electrical characteristic could be greatly improved by insertion of Ni or NiOx between AZO film and p-GaN layer. In case of 1 × 1 mm2 ultraviolet light-emitting diodes (LEDs) with Ni-AZO contacts, the light output approached saturation point when the injection, current was about 400 mA. However, the saturation point was as high as 500 mA for the LEDs with NiOx-AZO contacts. The lower saturation point could be due to the fact that the resistivity of Ni-AZO films was higher than that of NiOx-AZO films, thus leading to a severe current crowding effect. The increased resistivity of the Ni-AZO films could be attributed to the interdiffusion between Ni and AZO films. When compared to the LEDs with Ni-Au Ohmic contacts, the light output of the LEDs with Ni-AZO and NiOx-AZO contacts was higher by 38.2% and 60.6% at 350 mA, respectively.

原文English
頁(從 - 到)274-276
頁數3
期刊IEEE Photonics Technology Letters
18
發行號1
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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