Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching

Tseng Hsing Lin, Shui-Jinn Wang, Yung Chun Tu, Chien Hsiung Hung, Zong Sian You, Yu Hsueh Chin

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

A surface texturing scheme using ablation etching by KrF excimer laser irradiation and chemical wet etching is demonstrated to improve the light-extraction efficiency of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LED). Both simulated and experimental results on the light emission characteristics are presented and discussed. For the TFFC-LED (die size of 1×1 mm2) with the proposed surface roughening scheme, enhancements in light output power (LOP) by 13.08% (12.81%) and wall-plug efficiency (WPE) by 2.87% (2.25%) at 350 mA (700 mA) as compared with that of the TFFC-LED without surface texturing are achieved experimentally.

原文English
主出版物標題73rd Annual Device Research Conference, DRC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面123-124
頁數2
ISBN(電子)9781467381345
DOIs
出版狀態Published - 2015 八月 3
事件73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
持續時間: 2015 六月 212015 六月 24

出版系列

名字Device Research Conference - Conference Digest, DRC
2015-August
ISSN(列印)1548-3770

Other

Other73rd Annual Device Research Conference, DRC 2015
國家United States
城市Columbus
期間15-06-2115-06-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • 引用此

    Lin, T. H., Wang, S-J., Tu, Y. C., Hung, C. H., You, Z. S., & Chin, Y. H. (2015). Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching. 於 73rd Annual Device Research Conference, DRC 2015 (頁 123-124). [7175586] (Device Research Conference - Conference Digest, DRC; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175586