Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching

Wei Chi Lee, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Der Ming Kuo, Pei Ren Wang, Po Hong Wang

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

A two-step roughening process that uses a KrF excimer laser and KOH chemical etching for the n-GaN layer surface of vertically structured GaN-based light-emitting diodes (VLEDs) to yield circular protrusions with hexagonal cones atop for light extraction enhancement is demonstrated. A possible mechanism of the formation of the circular protrusions commenced by laser irradiation with nonuniform etching rates at sites with various dislocation densities was investigated. An improvement in light output power of about 95% at 350750 mA compared to that of flat VLEDs was obtained for the two-step roughened VLEDs, which is attributed to the increase in surface emission area and dimensions of roughness, and, in particular, the decrease in the n-GaN layer thickness.

原文English
文章編號5497081
頁(從 - 到)1318-1320
頁數3
期刊IEEE Photonics Technology Letters
22
發行號17
DOIs
出版狀態Published - 2010

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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