Enhanced light output of vertical GaN-based LEDs with surface roughened by SiO2 nanotube arrays

Der Ming Kuo, Shui-Jinn Wang, Kai Ming Uang, Tron Min Chen, Wei Chi Lee, Pei Ren Wang

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

The fabrication of SiO2 nanotube (SiO2 -NT) arrays and their promising application in improving light extraction of vertical structure GaN-based light emitting diodes (LEDs) are proposed. Compared to regular vertical-conducting light emitting dioded (VLEDs), the proposed VLEDs with SiO2 -NT arrays (2-3 μm in length) show increases in light output power (Lop) by 49.8-60.4% at 350 mA. In comparison to VLEDs with ZnO nanowire arrays having the same the dimension, enhancement of 12.3-22.9% in Lop has been achieved from the proposed devices. These improvements could be attributed to the use of SiO2 -NT arrays that not only boost the angular randomization of emitted photons but also enhance light transmission from the waveguiding effect.

原文English
期刊Electrochemical and Solid-State Letters
14
發行號2
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

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