The fabrication of SiO2 nanotube (SiO2 -NT) arrays and their promising application in improving light extraction of vertical structure GaN-based light emitting diodes (LEDs) are proposed. Compared to regular vertical-conducting light emitting dioded (VLEDs), the proposed VLEDs with SiO2 -NT arrays (2-3 μm in length) show increases in light output power (Lop) by 49.8-60.4% at 350 mA. In comparison to VLEDs with ZnO nanowire arrays having the same the dimension, enhancement of 12.3-22.9% in Lop has been achieved from the proposed devices. These improvements could be attributed to the use of SiO2 -NT arrays that not only boost the angular randomization of emitted photons but also enhance light transmission from the waveguiding effect.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Materials Science(all)
- Chemical Engineering(all)
- Physical and Theoretical Chemistry