Enhanced light output of vertical GaN-based LEDs with surface roughened by refractive-index-matched Si3N4/GaN nanowire arrays

Yung Chun Tu, Shui Jinn Wang, Guan Yu Lin, Tseng Hsing Lin, Chien Hsiung Hung, Fu Shou Tsai, Kai Ming Uang, Tron Min Chen

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

A surface roughening scheme with Si3N4-coated GaN nanowire (NW) arrays is proposed to improve the light extraction efficiency of GaN-based vertical light-emitting diodes (VLEDs). The scheme allows a graded refractive index that varies from 2.5 (GaN) to 1.9-2.0 (Si3N 4) to 1 (air). Experimental results show that the use of 0.8-μm-long GaN NW arrays coated with a 250-nm-thick Si3N 4 film enhances the light output power by 28.7% at 350mA compared with that of regular VLEDs with a KOH-roughened surface. This enhancement is attributed to the Si3N4/GaN NW arrays effectively releasing total internal reflection and minimizing Fresnel loss.

原文English
文章編號042101
期刊Applied Physics Express
7
發行號4
DOIs
出版狀態Published - 2014 四月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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