Enhanced light output of vertical-structured GaN-based light-emitting diode with surface roughening using KrF laser and ZnO nanorods

Wei Chi Lee, Kai Ming Uang, Tron Min Chen, Der Ming Kuo, Pei Ren Wang, Po Hong Wang, Shui Jinn Wang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

To further improve the performance of vertical-structured GaN-based light-emitting diodes (V-LEDs), surface roughening using a KrF laser and KOH wet chemical etching, followed by hydrothermal growth of vertically aligned ZnO nanorods on top of the n-GaN surface were investigated and discussed. Compared with that of the V-LEDs (300 × 300 μm2 in chip size) with only surface KOH wet etching, the formation of curved protrusions and ZnO nanorods on the n-GaN surface typically enables an increase in light output power (Lop) by 29% at 20mA and 41% at 100mA with a decrease in forward voltage (Vf) from 3.24 to 3.06 V at 20mA and 3.9 to 3.7V at 100 mA, respectively. The cumulative effect of the curved protrusions, hexagonal cones, and vertically aligned ZnO nanorods formed as a result of effectively reducing the effective thickness of the n-GaN layer, improving the ohmic contact to n-GaN, increasing the surface emission area, and enhancing the escape probability of photons was responsible for these improvements.

原文English
文章編號04DG12
期刊Japanese journal of applied physics
49
發行號4 PART 2
DOIs
出版狀態Published - 2010 四月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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