TY - JOUR
T1 - Enhanced light output of vertical-structured GaN-based light-emitting diodes with TiO2/SiO2 reflector and roughened GaO x surface film
AU - Lee, Wei Chi
AU - Wang, Shui Jinn
AU - Uang, Kai Ming
AU - Chen, Tron Min
AU - Kuo, Der Ming
AU - Wang, Pei Ren
AU - Wang, Po Hung
PY - 2011/4
Y1 - 2011/4
N2 - GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaOx film atop an n-GaN layer roughened via KrF laser irradiation and a TiO2/SiO2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaOx film, the proposed VLEDs with a chip size of 1mm2 show a typical increase in light output power by 68% at 350mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaOx film by KrF laser irradiation.
AB - GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaOx film atop an n-GaN layer roughened via KrF laser irradiation and a TiO2/SiO2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaOx film, the proposed VLEDs with a chip size of 1mm2 show a typical increase in light output power by 68% at 350mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaOx film by KrF laser irradiation.
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U2 - 10.1143/JJAP.50.04DG06
DO - 10.1143/JJAP.50.04DG06
M3 - Article
AN - SCOPUS:79955421595
SN - 0021-4922
VL - 50
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4 PART 2
M1 - 04DG06
ER -