Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes

Chong Yi Lee, Chih Hung Yen, S. U. Juh-Yuh, Hsen Wen Lin, Wen Chau Liu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

AlGaInP multiquantum-well (MQW) light-emitting diodes (LEDs), with the n-type modulation-doped (MD) structure, were grown by metal-organic vapor-phase epitaxy. On investigation, these n-type MD-MQW LEDs exhibited a higher luminescence (2.53 lm) and a higher luminous efficiency (16.05 lm/W) than those of conventional LEDs (2.04 lm and 14.49 lm/W, respectively). The junction temperature of the MD-MQW LEDs also showed the benefits of this structure over conventional LEDs with a 14°C reduction achieved at 150mA.

原文English
頁(從 - 到)4000-4002
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號5 A
DOIs
出版狀態Published - 2006 五月 9

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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