Enhanced luminescence of top-emission organic light emitting diodes with ZnS/Ag/ZnS structure

Wei Fan Liao, Jei Huang, Chih Jui Ni, Yoou Bin Guo, Chun Hao Teng, Franklin Chau-Nan Hong

研究成果: Conference contribution

摘要

The effect of ZnS/Ag/ZnS multiple-layer coating on the top-emitting top-cathode organic light emitting diodes (OLED) was studied. The OLED device consisted of Ag/CuPc:F4-TCNQ/NPB/Alq3/BCP/LiF/Al layers. All organic layers and electrodes were fabricated by thermal evaporation. F4-TCNQ was doped in the hole-injection layer (CuPc) to enhance hole injection, since the energy barrier between Ag and CuPc was high. ZnS layer was first deposited on the top cathode (Al) and found to enhance the light emission of the OLED by 50% (from 10,000 cd/m2 to 15,000 cd/m2). The high-refractive index dielectric material as a capping layer enhances light output for the semitransparent cathode. ZnS/Ag/ZnS multi-layer cathode with photon tunneling characteristics were added on top of Al cathode, and found to further enhance the light emission up to 20,000 cd/m2 at 13V for Al/ZnS/Ag/ZnS (17/37/8/37 nm) layers with maximum current efficiency of 2.6 cd/A. Coupling of surface plasmon modes may occur in the ZnS/Ag/ZnS structure. By increasing Ag layer thickness to compensate the reduction of Al layer thickness, the Al/ZnS/Ag/ZnS (7/37/15/37 nm) cathode was used, and found to achieve the maximum brightness of 31,000cd/m2 at 15V and a maximum current efficiency at 5.6 cd/A. The increase of luminescence efficiency is likely due to high photon tunneling efficiency of Ag as well as its high electric conductivity improving the electron injection.

原文English
主出版物標題Optoelectronic Devices
主出版物子標題Physics, Fabrication, and Application IV
DOIs
出版狀態Published - 2007 十二月 1
事件Optoelectronic Devices: Physics, Fabrication, and Application IV - Boston, MA, United States
持續時間: 2007 九月 112007 九月 11

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6766
ISSN(列印)0277-786X

Other

OtherOptoelectronic Devices: Physics, Fabrication, and Application IV
國家/地區United States
城市Boston, MA
期間07-09-1107-09-11

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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