Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography

H. M. Lo, Y. T. Hsieh, S. C. Shei, Y. C. Lee, X. F. Zeng, W. Y. Weng, N. M. Lin, S. J. Chang

研究成果: Article

1 引文 (Scopus)

摘要

The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.

原文English
頁(從 - 到)358-364
頁數7
期刊Superlattices and Microstructures
48
發行號4
DOIs
出版狀態Published - 2010 十月 1

指紋

Lithography
Light emitting diodes
Masks
light emitting diodes
masks
lithography
output
textures
Textures
injection
Fabrication
fabrication
Electric potential
electric potential
Costs

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

Lo, H. M. ; Hsieh, Y. T. ; Shei, S. C. ; Lee, Y. C. ; Zeng, X. F. ; Weng, W. Y. ; Lin, N. M. ; Chang, S. J. / Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography. 於: Superlattices and Microstructures. 2010 ; 卷 48, 編號 4. 頁 358-364.
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abstract = "The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.",
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Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography. / Lo, H. M.; Hsieh, Y. T.; Shei, S. C.; Lee, Y. C.; Zeng, X. F.; Weng, W. Y.; Lin, N. M.; Chang, S. J.

於: Superlattices and Microstructures, 卷 48, 編號 4, 01.10.2010, p. 358-364.

研究成果: Article

TY - JOUR

T1 - Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography

AU - Lo, H. M.

AU - Hsieh, Y. T.

AU - Shei, S. C.

AU - Lee, Y. C.

AU - Zeng, X. F.

AU - Weng, W. Y.

AU - Lin, N. M.

AU - Chang, S. J.

PY - 2010/10/1

Y1 - 2010/10/1

N2 - The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.

AB - The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.

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