@article{c97221b8f1e24c0cbddc00a12b036084,
title = "Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography",
abstract = "The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.",
author = "Lo, {H. M.} and Hsieh, {Y. T.} and Shei, {S. C.} and Lee, {Y. C.} and Zeng, {X. F.} and Weng, {W. Y.} and Lin, {N. M.} and Chang, {S. J.}",
note = "Funding Information: This work was granted in part by the Center for Frontier Materials and Micro/Nano Science and Technology , National Cheng Kung University and in part supported by the Advanced Optoelectronic Technology Center , National Cheng Kung University , under projects from the Ministry of Education. This work was also in part supported by the National Science Council of Taiwan through project NSC 96-2628-E-006-079-MY3 . The authors also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract No. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding related measurements.",
year = "2010",
month = oct,
doi = "10.1016/j.spmi.2010.08.005",
language = "English",
volume = "48",
pages = "358--364",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "4",
}