Enhanced performance of a GaN-based LED prepared by an anodized aluminum oxide-nanoporous pattern sapphire substrate

Zong Jie Tsai, Jian Kai Liou, Wen Chau Liu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A new approach to fabricate a GaN light-emitting diode (LED), grown on an anodized aluminum oxide-nanoporous pattern sapphire substrate (AAO-NPSS), is studied. An AAO film is used as a dry etching mask to transfer nanoporous patterns on the sapphire substrate. Because of the use of AAO-NPSS, threading dislocations could be reduced and air voids would be formed to reflect downward photons toward top direction. As compared with a conventional LED, at 20 mA, the AAO-NPSS-based device exhibits 52.8% enhancements of light output power. The reduced leakage current and lower turn-on voltage are also achieved. Therefore, the use of AAO-NPSS structure could effectively improve the crystalline quality and light extraction efficiency, which certainly leads to the enhanced performance of GaN LEDs.

原文English
文章編號6531659
頁(從 - 到)909-911
頁數3
期刊IEEE Electron Device Letters
34
發行號7
DOIs
出版狀態Published - 2013 六月 20

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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