Enhanced performance of GaN-based vertical light-emitting diodes with circular protrusions surmounted by hexagonal cones and indium-zinc oxide current spreading layer

Wei Chi Lee, Shui Jinn Wang, Pei Ren Wang, Kai Ming Uang, Tron Min Chen, Der Ming Kuo, Po Hung Wang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The performance of vertically structured GaN-based light-emitting diodes (VLEDs) with an efficient surface roughening scheme that uses KrF laser irradiation, chemical wet etching, and an indium-zinc oxide (IZO) transparent conductive layer atop the n-GaN surface is investigated. The GaN surface, with circular protrusions and hexagonal cones, gives photons multiple opportunities to find escape cones, and the IZO film acts as a current spreading layer. The fabricated VLEDs with the proposed surface roughening scheme exhibited 79.3 and 65.1% increases in light output power at 350 and 750 mA, respectively, and showed a relatively low forward voltage compared to that of regular VLEDs.

原文English
文章編號072104
期刊Applied Physics Express
4
發行號7
DOIs
出版狀態Published - 2011 七月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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