Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

Der Min Kuo, Shui Jinn Wang, Kai Ming Uang, Tron Min Chen, Hon Yi Kuo, Wei Chi Lee, Pei Ren Wang

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

原文English
文章編號5378587
頁(從 - 到)338-340
頁數3
期刊IEEE Photonics Technology Letters
22
發行號5
DOIs
出版狀態Published - 2010 3月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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