Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

Der Min Kuo, Shui-Jinn Wang, Kai Ming Uang, Tron Min Chen, Hon Yi Kuo, Wei Chi Lee, Pei Ren Wang

研究成果: Article

8 引文 (Scopus)

摘要

Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

原文English
文章編號5378587
頁(從 - 到)338-340
頁數3
期刊IEEE Photonics Technology Letters
22
發行號5
DOIs
出版狀態Published - 2010 三月 1

指紋

Zinc Oxide
Indium
Ohmic contacts
Zinc oxide
zinc oxides
indium oxides
Light emitting diodes
electric contacts
light emitting diodes
reflectance
Polystyrenes
Conversion efficiency
Masks
polystyrene
Mirrors
masks
mirrors
augmentation
output

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Kuo, Der Min ; Wang, Shui-Jinn ; Uang, Kai Ming ; Chen, Tron Min ; Kuo, Hon Yi ; Lee, Wei Chi ; Wang, Pei Ren. / Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells. 於: IEEE Photonics Technology Letters. 2010 ; 卷 22, 編號 5. 頁 338-340.
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Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells. / Kuo, Der Min; Wang, Shui-Jinn; Uang, Kai Ming; Chen, Tron Min; Kuo, Hon Yi; Lee, Wei Chi; Wang, Pei Ren.

於: IEEE Photonics Technology Letters, 卷 22, 編號 5, 5378587, 01.03.2010, p. 338-340.

研究成果: Article

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T1 - Enhanced performance of vertical GaN-B ased LEDs with highly reflective p-ohmic contact and periodic indium-zinc-oxide nano-wells

AU - Kuo, Der Min

AU - Wang, Shui-Jinn

AU - Uang, Kai Ming

AU - Chen, Tron Min

AU - Kuo, Hon Yi

AU - Lee, Wei Chi

AU - Wang, Pei Ren

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AB - Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p-ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

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