Enhanced performances of AlGaN/GaN ion-sensitive field-effect transistors using H2O2-grown Al2O3 for sensing membrane and surface passivation applications

Han Yin Liu, Wei-Chou Hsu, Ching Sung Lee, Bo Yi Chou, Wei Fan Chen

研究成果: Article

9 引文 (Scopus)

摘要

This paper uses H2O2 oxidation technique to grow Al2O3 on AlGaN/GaN heterostructure. The H2O2-grown-Al2O3 is served as a sensing membrane and a surface passivation layer. The contact angle of the ion-sensitive field-effect transistor (ISFET) with the H2O2-grown-Al2O3 is improved from 66.5° to 40.6° and this phenomenon indicates that the hydrophile characteristic is improved after the H2O2 treatment. The drain-source current (IDS) is improved ∼ 32% after the H2O2 oxidation due to the passivation effect. In addition, extrinsic transconductance (gm) characteristics of the transistors are investigated. The pH sensitivity is also improved from 41.6 to 55.2 mV/pH for the ISFET with H2O2-grown-Al2O3. Furthermore, the ISFET with the H2O2 treatment exhibits better transient characteristics compared with the ISFET without the H2O2 treatment. The sensitivity parameter (β) and the relationship between surface potential (ψs) and pH value are investigated by theoretical calculation. The hysteresis phenomenon and the drift effect can be improved using the present H2O2-grown Al2O3 as the sensing membrane and the passivation layer.

原文English
文章編號7006662
頁(從 - 到)3359-3366
頁數8
期刊IEEE Sensors Journal
15
發行號6
DOIs
出版狀態Published - 2015 六月 1

指紋

Ion sensitive field effect transistors
Passivation
passivity
field effect transistors
membranes
Membranes
ions
Oxidation
oxidation
sensitivity
Surface potential
Transconductance
transconductance
Contact angle
Hysteresis
Heterojunctions
Transistors
transistors
hysteresis

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

引用此文

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abstract = "This paper uses H2O2 oxidation technique to grow Al2O3 on AlGaN/GaN heterostructure. The H2O2-grown-Al2O3 is served as a sensing membrane and a surface passivation layer. The contact angle of the ion-sensitive field-effect transistor (ISFET) with the H2O2-grown-Al2O3 is improved from 66.5° to 40.6° and this phenomenon indicates that the hydrophile characteristic is improved after the H2O2 treatment. The drain-source current (IDS) is improved ∼ 32{\%} after the H2O2 oxidation due to the passivation effect. In addition, extrinsic transconductance (gm) characteristics of the transistors are investigated. The pH sensitivity is also improved from 41.6 to 55.2 mV/pH for the ISFET with H2O2-grown-Al2O3. Furthermore, the ISFET with the H2O2 treatment exhibits better transient characteristics compared with the ISFET without the H2O2 treatment. The sensitivity parameter (β) and the relationship between surface potential (ψs) and pH value are investigated by theoretical calculation. The hysteresis phenomenon and the drift effect can be improved using the present H2O2-grown Al2O3 as the sensing membrane and the passivation layer.",
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Enhanced performances of AlGaN/GaN ion-sensitive field-effect transistors using H2O2-grown Al2O3 for sensing membrane and surface passivation applications. / Liu, Han Yin; Hsu, Wei-Chou; Lee, Ching Sung; Chou, Bo Yi; Chen, Wei Fan.

於: IEEE Sensors Journal, 卷 15, 編號 6, 7006662, 01.06.2015, p. 3359-3366.

研究成果: Article

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AU - Lee, Ching Sung

AU - Chou, Bo Yi

AU - Chen, Wei Fan

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AB - This paper uses H2O2 oxidation technique to grow Al2O3 on AlGaN/GaN heterostructure. The H2O2-grown-Al2O3 is served as a sensing membrane and a surface passivation layer. The contact angle of the ion-sensitive field-effect transistor (ISFET) with the H2O2-grown-Al2O3 is improved from 66.5° to 40.6° and this phenomenon indicates that the hydrophile characteristic is improved after the H2O2 treatment. The drain-source current (IDS) is improved ∼ 32% after the H2O2 oxidation due to the passivation effect. In addition, extrinsic transconductance (gm) characteristics of the transistors are investigated. The pH sensitivity is also improved from 41.6 to 55.2 mV/pH for the ISFET with H2O2-grown-Al2O3. Furthermore, the ISFET with the H2O2 treatment exhibits better transient characteristics compared with the ISFET without the H2O2 treatment. The sensitivity parameter (β) and the relationship between surface potential (ψs) and pH value are investigated by theoretical calculation. The hysteresis phenomenon and the drift effect can be improved using the present H2O2-grown Al2O3 as the sensing membrane and the passivation layer.

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