Enhanced resonant tunneling real-space transfer in 5-doped GaAs/InGaAs gated dual-channel transistors grown by mocvd

Chang Luen Wu, Wei Chou Hsu

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

We report the observation of pronounced N-shaped negative differential resistance (NDR) and negative transconductance at high drain and gate fields in ('-doped GaAs/InGaAs gated dual-channel transistors (DCT's) by tunneling real-space transfer (TRST). By virtue of varying the sheet density of 6 -doping layer as well as the thickness of GaAs barrier, pronounced multiplestate N l) K characteristics were obtained accompanying by the gate current characteristic at room temperature. A peak-to-valley current ratio (PVR) of 15 which, to our knowledge, is the highest among the reported TRST devices at room temperature. The proposed devices possess potential advantages of ease of growth and fabrication.

原文English
頁(從 - 到)207-212
頁數6
期刊IEEE Transactions on Electron Devices
43
發行號2
DOIs
出版狀態Published - 1996

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「Enhanced resonant tunneling real-space transfer in 5-doped GaAs/InGaAs gated dual-channel transistors grown by mocvd」主題。共同形成了獨特的指紋。

引用此