We report the observation of pronounced N-shaped negative differential resistance (NDR) and negative transconductance at high drain and gate fields in ('-doped GaAs/InGaAs gated dual-channel transistors (DCT's) by tunneling real-space transfer (TRST). By virtue of varying the sheet density of 6 -doping layer as well as the thickness of GaAs barrier, pronounced multiplestate N l) K characteristics were obtained accompanying by the gate current characteristic at room temperature. A peak-to-valley current ratio (PVR) of 15 which, to our knowledge, is the highest among the reported TRST devices at room temperature. The proposed devices possess potential advantages of ease of growth and fabrication.
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