Enhancement in light output of InGaN-based microhole array light-emitting diodes

Taohung H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, S. C. Wang

研究成果: Article同行評審

54 引文 斯高帕斯(Scopus)

摘要

InGaN-based microhole array light-emitting diodes (LEDs) with hole diameters (d) of 3-15 μm were fabricated using self-aligned etching. The effects of size on the device characteristics, including current density-voltage and light output-current density, were measured and compared with those of conventional broad-area (BA) LEDs fabricated from the same wafer. The electrical characteristics of the devices are similar to those of conventional BA LEDs. The light output from the microhole array LEDs increases with d up to 7 μm. However, the light output declined as d increased further, perhaps because of the combination of the enhancement in extraction efficiency caused by the large surface areas provided by the sidewalls and the decrease in area of light generation by holes in the microhole array LEDs. The ray tracing method was used with a two-dimensional model in TracePro software. The findings indicate that an optimal design can improve the light output efficiently of the microhole array LEDs.

原文English
頁(從 - 到)1163-1165
頁數3
期刊IEEE Photonics Technology Letters
17
發行號6
DOIs
出版狀態Published - 2005 六月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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