TY - JOUR
T1 - Enhancement in the Deposition Behavior and Deposit Properties of Electroless Ni-Cu-P
AU - Hsu, Jen Che
AU - Lin, Kwang Lung
PY - 2003/7/1
Y1 - 2003/7/1
N2 - This work describes as an attempt to improve the deposit properties of electroless Ni-Cu-P deposits by controlling the deposition condition and the composition of the plating solution. Tensile internal stress induced by hydrogen evolution during electroless Ni-Cu-P deposition was manipulated by controlling deposition conditions such as stirring and zincating. The stirring action releases the hydrogen-induced stress and improves adhesion of the deposit in the condition of once zincate pretreatment. It was also attempted to vary the concentration of reducing agents (NaH2PO 2·H2O), buffering agents (NH4Cl), and complexing agents (Na3C6H5O 7·2H2O) of the plating solution to improve the deposition rate, crystallinity and the composition uniformity of Ni-Cu-P deposits. The results show that a decrease in complexing agents results in steadier deposition of Ni and Cu elements and higher deposition rate. The preferable deposition solution consists of 0.057 mol/L NiSO 4·6H2O, 0.0008 mol/L CuSO 4·5H2O, 0.14 mol/L NaH2PO 2·H2O, 0.07 or 0.09 mol/L Na3C 6H5O7·2H2O, and 0.75 mol/L NH4Cl at pH 8.0, which creates amorphous and uniform Ni-Cu-P deposits.
AB - This work describes as an attempt to improve the deposit properties of electroless Ni-Cu-P deposits by controlling the deposition condition and the composition of the plating solution. Tensile internal stress induced by hydrogen evolution during electroless Ni-Cu-P deposition was manipulated by controlling deposition conditions such as stirring and zincating. The stirring action releases the hydrogen-induced stress and improves adhesion of the deposit in the condition of once zincate pretreatment. It was also attempted to vary the concentration of reducing agents (NaH2PO 2·H2O), buffering agents (NH4Cl), and complexing agents (Na3C6H5O 7·2H2O) of the plating solution to improve the deposition rate, crystallinity and the composition uniformity of Ni-Cu-P deposits. The results show that a decrease in complexing agents results in steadier deposition of Ni and Cu elements and higher deposition rate. The preferable deposition solution consists of 0.057 mol/L NiSO 4·6H2O, 0.0008 mol/L CuSO 4·5H2O, 0.14 mol/L NaH2PO 2·H2O, 0.07 or 0.09 mol/L Na3C 6H5O7·2H2O, and 0.75 mol/L NH4Cl at pH 8.0, which creates amorphous and uniform Ni-Cu-P deposits.
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U2 - 10.1149/1.1601229
DO - 10.1149/1.1601229
M3 - Article
AN - SCOPUS:0041779983
SN - 0013-4651
VL - 150
SP - C653-C656
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 9
ER -