Enhancement-mode in0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol-gel processed gate dielectrics

Chih Chun Hu, Cheng En Wu, Hsien Cheng Lin, Kuan Wei Lee, Yeong Her Wang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Enhancement-mode In0.53Ga0.47As n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), with barium zirconate titanate (BZT) and titanium dioxide (TiO2) high-innodatak materials prepared via the solution-gelation process as gate dielectrics, have been fabricated. The dielectric constants of BZT and TiO2 are 6.67 and 19.3, respectively. The In0.53Ga0.47As MOSFET with TiO2 exhibits better electrical characteristics than the In0.53Ga0.47As MOSFET with BZT. These characteristics include higher maximum drain current density, higher maximum transconductance, and smaller subthreshold swing.

原文English
頁(從 - 到)272-276
頁數5
期刊Materials Science in Semiconductor Processing
29
DOIs
出版狀態Published - 2015 一月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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