An enhancement-mode In0.52Al0.48As/In 0.6Ga0.4As tunneling real-space transfer high-electron mobility transistor (HEMT) was discussed. The study was carried out by thinning the InAlAs barrier layer , where the gate recess depth was changed for controlling the threshold voltage. The channel current was totally pinched off after the Schottky gate was formed and the enhancement-mode operation was manifested. It was found that when the gate was sufficiently large, the device exhibits a N-shaped negative differential resistance (NDR) behavior since hot electron tunnel from the InGaAs channel layer to the gate electrode.
|頁（從 - 到）||974-976|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 2004 五月 1|
All Science Journal Classification (ASJC) codes