Enhancement-mode In0.52Al0.48As/ln 0.6Ga0.4As tunneling real space transfer high electron mobility transistor

Yen Wei Chen, Yeong Jia Chen, Wei Chou Hsu, Rong Tay Hsu, Yue Huei Wu, Yu Shyan Lin

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

An enhancement-mode In0.52Al0.48As/In 0.6Ga0.4As tunneling real-space transfer high-electron mobility transistor (HEMT) was discussed. The study was carried out by thinning the InAlAs barrier layer , where the gate recess depth was changed for controlling the threshold voltage. The channel current was totally pinched off after the Schottky gate was formed and the enhancement-mode operation was manifested. It was found that when the gate was sufficiently large, the device exhibits a N-shaped negative differential resistance (NDR) behavior since hot electron tunnel from the InGaAs channel layer to the gate electrode.

原文English
頁(從 - 到)974-976
頁數3
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
22
發行號3
出版狀態Published - 2004 五月 1

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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