Enhancement-Mode Quantum-Well Gex Si1―x PMOS

D. K. Nayak, J. C.S. Woo, J. S. Park, K. L. Wang, K. P. MacWilliams

研究成果: Article同行評審

170 引文 斯高帕斯(Scopus)

摘要

In this paper the fabrication of an enhancement-mode quantum-well Ge0.2Si0.8 PMOS is reported. The devices show good saturation and cutoff behavior. A saturation transconductance of 64 mS/mm is measured for a 0.7-μm channel device at a drain-to-source voltage of —2.5 V. The channel mobility has been found to be higher than that of a similarly processed Si p-channel MOSFET.

原文English
頁(從 - 到)154-156
頁數3
期刊IEEE Electron Device Letters
12
發行號4
DOIs
出版狀態Published - 1991 四月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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