Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Yi Ping Huang, Wei Chou Hsu, Han Yin Liu, Ching Sung Lee

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al2O3 as the gate dielectric layer. The proposed device reveals a threshold voltage (VTH) of +2.3 V and a maximum drain current (ID,max) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/OFF-state current (ION/IOFF) ratio of 109-1010, a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 uA/mm while keeping a low-specific ON-resistance (RON,sp) of 1.04m-cm2. This novel E-mode device presents a great potential for power device applications.

原文English
文章編號8693634
頁(從 - 到)929-932
頁數4
期刊IEEE Electron Device Letters
40
發行號6
DOIs
出版狀態Published - 2019 六月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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