This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al2O3 as the gate dielectric layer. The proposed device reveals a threshold voltage (VTH) of +2.3 V and a maximum drain current (ID,max) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/OFF-state current (ION/IOFF) ratio of 109-1010, a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 uA/mm while keeping a low-specific ON-resistance (RON,sp) of 1.04m-cm2. This novel E-mode device presents a great potential for power device applications.
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