Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Yi Ping Huang, Wei-Chou Hsu, Han Yin Liu, Ching Sung Lee

研究成果: Article

摘要

This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al2O3 as the gate dielectric layer. The proposed device reveals a threshold voltage (VTH) of +2.3 V and a maximum drain current (ID,max) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/OFF-state current (ION/IOFF) ratio of 109-1010, a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 uA/mm while keeping a low-specific ON-resistance (RON,sp) of 1.04m-cm2. This novel E-mode device presents a great potential for power device applications.

原文English
文章編號8693634
頁(從 - 到)929-932
頁數4
期刊IEEE Electron Device Letters
40
發行號6
DOIs
出版狀態Published - 2019 六月 1

指紋

Spray pyrolysis
Gate dielectrics
Drain current
Electric breakdown
Threshold voltage
Leakage currents
Nanowires
Ultrasonics
rice bran saccharide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Huang, Yi Ping ; Hsu, Wei-Chou ; Liu, Han Yin ; Lee, Ching Sung. / Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications. 於: IEEE Electron Device Letters. 2019 ; 卷 40, 編號 6. 頁 929-932.
@article{1e08aa6402c0462bbf91c4b4c0350075,
title = "Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications",
abstract = "This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al2O3 as the gate dielectric layer. The proposed device reveals a threshold voltage (VTH) of +2.3 V and a maximum drain current (ID,max) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/OFF-state current (ION/IOFF) ratio of 109-1010, a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 uA/mm while keeping a low-specific ON-resistance (RON,sp) of 1.04m-cm2. This novel E-mode device presents a great potential for power device applications.",
author = "Huang, {Yi Ping} and Wei-Chou Hsu and Liu, {Han Yin} and Lee, {Ching Sung}",
year = "2019",
month = "6",
day = "1",
doi = "10.1109/LED.2019.2911698",
language = "English",
volume = "40",
pages = "929--932",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications. / Huang, Yi Ping; Hsu, Wei-Chou; Liu, Han Yin; Lee, Ching Sung.

於: IEEE Electron Device Letters, 卷 40, 編號 6, 8693634, 01.06.2019, p. 929-932.

研究成果: Article

TY - JOUR

T1 - Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

AU - Huang, Yi Ping

AU - Hsu, Wei-Chou

AU - Liu, Han Yin

AU - Lee, Ching Sung

PY - 2019/6/1

Y1 - 2019/6/1

N2 - This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al2O3 as the gate dielectric layer. The proposed device reveals a threshold voltage (VTH) of +2.3 V and a maximum drain current (ID,max) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/OFF-state current (ION/IOFF) ratio of 109-1010, a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 uA/mm while keeping a low-specific ON-resistance (RON,sp) of 1.04m-cm2. This novel E-mode device presents a great potential for power device applications.

AB - This letter demonstrates a novel enhancement-mode (E-mode) tri-gate nanowire InAlN/GaN MOSHEMT with ultrasonic spray pyrolysis deposition (USPD) deposited Al2O3 as the gate dielectric layer. The proposed device reveals a threshold voltage (VTH) of +2.3 V and a maximum drain current (ID,max) of 705 mA/mm. It also exhibits superior electrical performances, including a high ON-state/OFF-state current (ION/IOFF) ratio of 109-1010, a steep subthreshold swing (SS) of 65 mV/decade, and a large breakdown voltage (BV) of 800 V with a leakage current of 0.7 uA/mm while keeping a low-specific ON-resistance (RON,sp) of 1.04m-cm2. This novel E-mode device presents a great potential for power device applications.

UR - http://www.scopus.com/inward/record.url?scp=85066431028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066431028&partnerID=8YFLogxK

U2 - 10.1109/LED.2019.2911698

DO - 10.1109/LED.2019.2911698

M3 - Article

AN - SCOPUS:85066431028

VL - 40

SP - 929

EP - 932

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

M1 - 8693634

ER -