Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

H. T. Lin, Y. F. Chen, P. W. Huang, S. H. Wang, J. H. Huang, C. H. Lai, W. N. Lee, T. S. Chin

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10 引文 斯高帕斯(Scopus)

摘要

An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.

原文English
文章編號262502
期刊Applied Physics Letters
89
發行號26
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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