Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

H. T. Lin; Y. F. Chen; P. W. Huang; S. H. Wang; J. H. Huang; C. H. Lai; W. N. Lee; T. S. Chin

doi:10.1063/1.2410234

Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

H. T. Lin, Y. F. Chen, P. W. Huang, S. H. Wang, J. H. Huang, C. H. Lai, W. N. Lee, T. S. Chin

物理學系

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7 引文斯高帕斯（Scopus）

摘要

An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.

原文	English
文章編號	262502
期刊	Applied Physics Letters
卷	89
發行號	26
DOIs	https://doi.org/10.1063/1.2410234
出版狀態	Published - 2006

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.2410234

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title = "Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface",

abstract = "An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.",

author = "Lin, {H. T.} and Chen, {Y. F.} and Huang, {P. W.} and Wang, {S. H.} and Huang, {J. H.} and Lai, {C. H.} and Lee, {W. N.} and Chin, {T. S.}",

note = "Funding Information: The authors are grateful to the National Science Council of Taiwan for sponsoring this research under the grants NSC 94-2120-M-007-012.",

year = "2006",

doi = "10.1063/1.2410234",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

AU - Lin, H. T.

AU - Chen, Y. F.

AU - Huang, P. W.

AU - Wang, S. H.

AU - Huang, J. H.

AU - Lai, C. H.

AU - Lee, W. N.

AU - Chin, T. S.

N1 - Funding Information: The authors are grateful to the National Science Council of Taiwan for sponsoring this research under the grants NSC 94-2120-M-007-012.

PY - 2006

Y1 - 2006

N2 - An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.

AB - An atomically flat and uniform reaction layer of Mn(Ga)As was found to self-organize at the (Ga,Mn) AsIrMn interface by postannealing. The Mn(Ga)As layer exhibits strong ferromagnetic characteristics up to the measured 300 K. In particular, the manifested horizontal shift of field-cooled hysteresis loops shows a clear signature of exchange bias attributable to the exchange coupling between IrMn and Mn(Ga)As. Implication from composition analyses, exchange-bias effect, and thickness dependence of the Mn(Ga)As layer versus annealing conditions is also discussed.

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DO - 10.1063/1.2410234

M3 - Article

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262502

ER -

Enhancement of exchange coupling between GaMnAs and IrMn with self-organized Mn(Ga)As at the interface

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