Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment

Chun Chia Chen, Huey Ing Chen, I. Ping Liu, Hao Yeh Liu, Po Cheng Chou, Jian Kai Liou, Wen Chau Liu

研究成果: Article

22 引文 (Scopus)

摘要

In this work, enhanced hydrogen sensing characteristics of a GaN-based Schottky diode-type sensor with a GaOx layer are studied and demonstrated. A thin GaOx layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room temperature. Experimentally, a significantly high hydrogen sensing response of 1.8 × 105 and a large Schottky barrier height variation ratio of 33.1% are found upon exposure to a 1% H2/air gas at 300 K. In addition, a very low detection limit of 0.1 ppm H2/air at 300 K is obtained. These improved properties could be attributed to the effective dissociation of hydrogen molecules and rougher Pd surface caused by the presence of the GaOx layer. The response (recovery) time constant of 13.3 (23.6) s is obtained upon exposure to a 1% H2/air gas at 300 K. The related hydrogen adsorption analysis of the proposed device is also studied and demonstrated.

原文English
頁(從 - 到)303-309
頁數7
期刊Sensors and Actuators, B: Chemical
211
DOIs
出版狀態Published - 2015 五月

指紋

Schottky diodes
surface treatment
hydrogen peroxide
Hydrogen peroxide
Hydrogen Peroxide
Surface treatment
Hydrogen
Diodes
augmentation
hydrogen
air
Air
Gases
gases
submerging
time constant
recovery
dissociation
Adsorption
Recovery

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

Chen, Chun Chia ; Chen, Huey Ing ; Liu, I. Ping ; Liu, Hao Yeh ; Chou, Po Cheng ; Liou, Jian Kai ; Liu, Wen Chau. / Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment. 於: Sensors and Actuators, B: Chemical. 2015 ; 卷 211. 頁 303-309.
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abstract = "In this work, enhanced hydrogen sensing characteristics of a GaN-based Schottky diode-type sensor with a GaOx layer are studied and demonstrated. A thin GaOx layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room temperature. Experimentally, a significantly high hydrogen sensing response of 1.8 × 105 and a large Schottky barrier height variation ratio of 33.1{\%} are found upon exposure to a 1{\%} H2/air gas at 300 K. In addition, a very low detection limit of 0.1 ppm H2/air at 300 K is obtained. These improved properties could be attributed to the effective dissociation of hydrogen molecules and rougher Pd surface caused by the presence of the GaOx layer. The response (recovery) time constant of 13.3 (23.6) s is obtained upon exposure to a 1{\%} H2/air gas at 300 K. The related hydrogen adsorption analysis of the proposed device is also studied and demonstrated.",
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Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment. / Chen, Chun Chia; Chen, Huey Ing; Liu, I. Ping; Liu, Hao Yeh; Chou, Po Cheng; Liou, Jian Kai; Liu, Wen Chau.

於: Sensors and Actuators, B: Chemical, 卷 211, 05.2015, p. 303-309.

研究成果: Article

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AU - Chen, Chun Chia

AU - Chen, Huey Ing

AU - Liu, I. Ping

AU - Liu, Hao Yeh

AU - Chou, Po Cheng

AU - Liou, Jian Kai

AU - Liu, Wen Chau

PY - 2015/5

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N2 - In this work, enhanced hydrogen sensing characteristics of a GaN-based Schottky diode-type sensor with a GaOx layer are studied and demonstrated. A thin GaOx layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room temperature. Experimentally, a significantly high hydrogen sensing response of 1.8 × 105 and a large Schottky barrier height variation ratio of 33.1% are found upon exposure to a 1% H2/air gas at 300 K. In addition, a very low detection limit of 0.1 ppm H2/air at 300 K is obtained. These improved properties could be attributed to the effective dissociation of hydrogen molecules and rougher Pd surface caused by the presence of the GaOx layer. The response (recovery) time constant of 13.3 (23.6) s is obtained upon exposure to a 1% H2/air gas at 300 K. The related hydrogen adsorption analysis of the proposed device is also studied and demonstrated.

AB - In this work, enhanced hydrogen sensing characteristics of a GaN-based Schottky diode-type sensor with a GaOx layer are studied and demonstrated. A thin GaOx layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room temperature. Experimentally, a significantly high hydrogen sensing response of 1.8 × 105 and a large Schottky barrier height variation ratio of 33.1% are found upon exposure to a 1% H2/air gas at 300 K. In addition, a very low detection limit of 0.1 ppm H2/air at 300 K is obtained. These improved properties could be attributed to the effective dissociation of hydrogen molecules and rougher Pd surface caused by the presence of the GaOx layer. The response (recovery) time constant of 13.3 (23.6) s is obtained upon exposure to a 1% H2/air gas at 300 K. The related hydrogen adsorption analysis of the proposed device is also studied and demonstrated.

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