Enhancement of Hydrogen Sensing Performance of a Pd Nanoparticle/Pd Film/GaOx/GaN-Based Metal-Oxide- Semiconductor Diode

Bu Yuan Ke, Wen-Chau Liu

研究成果: Article

2 引文 (Scopus)

摘要

A new Pd nanoparticle (NP)/Pd film/GaOx/GaN-based metal-oxide-semiconductor diode hydrogen sensor is fabricated and studied. In this paper, appropriate photochemical drop coating and an H2O2 surface treatment were used to form Pd NPs and a GaOx dielectric layer. The Pd NPs increased the surface area/volume ratio, and the presence of GaOx layer led to the effective dissociation of hydrogen molecules. The improved hydrogen sensing properties include a very high sensing response of 1.24 × 107 (in 1% H2/air gas at 300 K) and an extremely low detection level (≤1 ppm H2/air). Furthermore, based on a kinetic adsorption analysis, the activation energy was only 13.1 KJ · mol-1 that is beneficial for hydrogen sensing. The proposed device is therefore promising for high-performance hydrogen sensing applications.

原文English
文章編號8450052
頁(從 - 到)4577-4584
頁數8
期刊IEEE Transactions on Electron Devices
65
發行號10
DOIs
出版狀態Published - 2018 十月 1

指紋

Semiconductor diodes
Hydrogen
Metals
Nanoparticles
Air
Surface treatment
Activation energy
Gases
Oxide semiconductors
Adsorption
Coatings
Molecules
Kinetics
Sensors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

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abstract = "A new Pd nanoparticle (NP)/Pd film/GaOx/GaN-based metal-oxide-semiconductor diode hydrogen sensor is fabricated and studied. In this paper, appropriate photochemical drop coating and an H2O2 surface treatment were used to form Pd NPs and a GaOx dielectric layer. The Pd NPs increased the surface area/volume ratio, and the presence of GaOx layer led to the effective dissociation of hydrogen molecules. The improved hydrogen sensing properties include a very high sensing response of 1.24 × 107 (in 1{\%} H2/air gas at 300 K) and an extremely low detection level (≤1 ppm H2/air). Furthermore, based on a kinetic adsorption analysis, the activation energy was only 13.1 KJ · mol-1 that is beneficial for hydrogen sensing. The proposed device is therefore promising for high-performance hydrogen sensing applications.",
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