@inproceedings{9661a6367020447d9d7df12bdc5b7305,
title = "Enhancement of LED light-extraction efficiency by anodic oxidation",
abstract = "In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35\%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light-emitting diodes (PA-LEDs). The pore distances about 25-80 nm under anodized voltage ranges of 10-30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (∼0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters. copyright The Electrochemical Society.",
author = "Wang, \{Chien Chun\} and Lu, \{Wei Lun\} and Yen, \{Te Chi\} and Liu, \{Chien Chih\} and Chu, \{Chang Hsin\} and Wang, \{Yeong Her\} and Houng, \{Mau Phon\}",
year = "2006",
doi = "10.1149/1.2204894",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "217--221",
booktitle = "State-of-the-Art Program on Compound Semiconductors XLIV",
edition = "5",
note = "State-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting ; Conference date: 07-05-2006 Through 12-05-2006",
}