Enhancement of Si hole mobility in coupled delta-doped wells

T. K. Carns, X. Zheng, K. L. Wang

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

When two or more highly doped, thin (delta-doped) layers are placed in close proximity to one another it is found that an enhancement of the hole mobility occurs over that of a single delta (δ) layer as well as that of the Si bulk case. Hall mobilities of up to 2400 cm2 V-1 s-1 at 77 K have been obtained with δ layers spaced 200 Å apart compared to a mobility of 280 cm2 V-1 s -1 for the single delta layer. The conductivity of the coupled δ-doped well exceeds that of comparable uniformly doped bulk layers, especially at lower temperatures. These types of structures show great promise in obtaining high mobilities with high carrier densities for semiconductors grown by simple homoepitaxy.

原文English
頁(從 - 到)3455-3457
頁數3
期刊Applied Physics Letters
62
發行號26
DOIs
出版狀態Published - 1993

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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