Enhancement of spin-to-charge conversion efficiency in topological insulators by interface engineering

Haoran He, Lixuan Tai, Di Wu, Hao Wu, Armin Razavi, Kin Wong, Yuxiang Liu, Kang L. Wang

研究成果: Article同行評審

摘要

Topological insulator (TI) based heterostructure is a prospective candidate for ultrahigh spin-to-charge conversion efficiency due to its unique surface states. We investigate the spin-to-charge conversion in (Bi,Sb)2Te3 (BST)/CoFeB, BST/Ru/CoFeB, and BST/Ti/CoFeB by spin pumping measurement. We find that the inverse Edelstein effect length (λIEE) increases by 60% with a Ru insertion while remains constant with a Ti insertion. This can be potentially explained by the protection of BST surface states due to the high electronegativity of Ru. Such enhancement is independent of the insertion layer thickness once the thickness of Ru is larger than 0.5 nm, and this result suggests that λIEE is very sensitive to the TI interface. In addition, an effectively perpendicular magnetic anisotropy field and additional magnetic damping are observed in the BST/CoFeB sample, which comes from the interfacial spin-orbit coupling between the BST and the CoFeB. Our work provides a method to enhance λIEE and is useful for the understanding of charge-to-spin conversion in TI-based systems.

原文English
文章編號071104
期刊APL Materials
9
發行號7
DOIs
出版狀態Published - 2021 七月 1

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 工程 (全部)

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