Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

C. C. Yang, J. K. Sheu, Xin Wei Liang, Min Shun Huang, M. L. Lee, K. H. Chang, S. J. Tu, Feng Wen Huang, W. C. Lai

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

InGaN/sapphire-based p-i-n type photovoltaic (PV) devices were shown to have Al0.14 Ga0.86N/ In0.21 Ga0.79 N heterostructures that enhance the extraction of photogenerated carriers from active layers. With an appropriately increased barrier height in AlGaN/InGaN absorption layers, PV devices exhibit lower RS despite the increase in conduction-band discontinuity compared with GaN/InGaN superlattice absorption layers. This improvement can be attributed to polarization-induced electric fields enhanced by the incorporated aluminum in barrier layers. The enhancement is beneficial to increase built-in electric fields. Subsequently, the photogenerated carriers can escape more easily from recombination or scattering centers. Under 1 sun air-mass 1.5 standard testing conditions, the A l0.14 Ga0.86 N/ In0.21 Ga0.79 N PV device exhibits high VOC (2.10 V) as well as an enhanced fill factor (0.66) and JSC (0.84 mA/ cm2) corresponding to a power conversion efficiency of 1.16%.

原文English
文章編號021113
期刊Applied Physics Letters
97
發行號2
DOIs
出版狀態Published - 2010 七月 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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