Wurtzite structure materials such as ZnO exhibits piezoelectric and semiconducting properties with piezoelectric coefficient as a dominant physical characteristic. We investigate the dependence of the piezoelectric coefficient on the Mg content in the MgxZn1-xO thin films deposited on Si (111) substrate by radio frequency magnetron sputtering. The deposition temperature is fixed at 250 °C and all the films have near equal thickness (380 nm). All MgxZn1-xO films show high crystallinity with strong preferential orientation along  growth direction. Moreover, the diffraction peaks shift toward higher angles which confirms the substitution of the smaller ionic radius of magnesium at zinc site. The piezoelectric coefficient of MgxZn1-xO films as measured by piezoelectric force microscopy, exhibits the maximum (54.1 pm/V) at an intermediate Mg concentration (x = 0.28), which is largely improved as compared to ZnO. The MgxZn1-xO films hold great promise to be applied in piezoelectric nanogenerator (NG).
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry