Enhancement of the piezoelectric coefficient in hexagonal MgxZn1-xO films at lower Mg compositions

研究成果: Article

14 引文 斯高帕斯(Scopus)


Wurtzite structure materials such as ZnO exhibits piezoelectric and semiconducting properties with piezoelectric coefficient as a dominant physical characteristic. We investigate the dependence of the piezoelectric coefficient on the Mg content in the MgxZn1-xO thin films deposited on Si (111) substrate by radio frequency magnetron sputtering. The deposition temperature is fixed at 250 °C and all the films have near equal thickness (380 nm). All MgxZn1-xO films show high crystallinity with strong preferential orientation along [0001] growth direction. Moreover, the diffraction peaks shift toward higher angles which confirms the substitution of the smaller ionic radius of magnesium at zinc site. The piezoelectric coefficient of MgxZn1-xO films as measured by piezoelectric force microscopy, exhibits the maximum (54.1 pm/V) at an intermediate Mg concentration (x = 0.28), which is largely improved as compared to ZnO. The MgxZn1-xO films hold great promise to be applied in piezoelectric nanogenerator (NG).

頁(從 - 到)1248-1253
期刊Journal of Alloys and Compounds
出版狀態Published - 2017 一月 1

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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