Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the Schottky contacts on AlGaN/GaN heterostructures

Chung Yu Lu, Edward Yi Chang, Jui Chien Huang, Chia Ta Chang, Mei Hsuan Lin, Ching Tung Lee

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Tungsten, stoichiometric W 2N, and nitrogen-rich W 2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600°C thermal annealing, the diode was stable and showed no change in the leakage current.

原文English
頁(從 - 到)624-627
頁數4
期刊Journal of Electronic Materials
37
發行號5
DOIs
出版狀態Published - 2008 5月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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