Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates

Chia Yun Chen, Ta Cheng Wei, Cheng Ting Lin, Jheng Yi Li

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE). In comparison with conventional MaCE process, a dramatic increase of etching rates upon MaCE process could be found by employing the conductive back substrates on p-type Si, while additionally prevented the creation of nanopores from catalytic etching reaction. Examinations on the involving etching kinetics, morphologies, wetting behaviors and surface structures were performed that validated the role of back substrates upon MaCE process. It was found that the involved two pathways for the extraction of electrons within Si favored the localized oxidation of Si at Si/Ag interfaces, thereby increasing the etching rate of MaCE process. This back-substrate involved MaCE could potentially meet the practical needs for the high-yield formation of Si nanowire arrays.

原文English
文章編號3164
期刊Scientific reports
7
發行號1
DOIs
出版狀態Published - 2017 12月 1

All Science Journal Classification (ASJC) codes

  • 多學科

指紋

深入研究「Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates」主題。共同形成了獨特的指紋。

引用此