Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

Y. S. Lin, D. H. Huang, Wei-Chou Hsu, K. H. Su, T. B. Wang

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

This paper reports InP/InGaAs double heterojunction bipolar transistors (DHBTs) made with composite-collector designs. The current gains of the DHBTs without and with emitter edge-thinning designs are 125 and 180, respectively. The composition of the collector and the base currents is analysed from the Gummel plots. Experimental data demonstrate that emitter edge thinning can further reduce the surface recombination current of the InP/InGaAs DHBTs and thus dramatically improve current gain, even though the surface recombination in InP/InGaAs DHBTs is much less than in GaAs-based DHBTs.

原文English
頁(從 - 到)303-305
頁數3
期刊Semiconductor Science and Technology
21
發行號3
DOIs
出版狀態Published - 2006 三月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

指紋 深入研究「Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning」主題。共同形成了獨特的指紋。

引用此