Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

Y. S. Lin; D. H. Huang; Wei-Chou Hsu; K. H. Su; T. B. Wang

doi:10.1088/0268-1242/21/3/017

Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

Y. S. Lin, D. H. Huang, Wei-Chou Hsu, K. H. Su, T. B. Wang

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

This paper reports InP/InGaAs double heterojunction bipolar transistors (DHBTs) made with composite-collector designs. The current gains of the DHBTs without and with emitter edge-thinning designs are 125 and 180, respectively. The composition of the collector and the base currents is analysed from the Gummel plots. Experimental data demonstrate that emitter edge thinning can further reduce the surface recombination current of the InP/InGaAs DHBTs and thus dramatically improve current gain, even though the surface recombination in InP/InGaAs DHBTs is much less than in GaAs-based DHBTs.

原文	English
頁（從 - 到）	303-305
頁數	3
期刊	Semiconductor Science and Technology
卷	21
發行號	3
DOIs	https://doi.org/10.1088/0268-1242/21/3/017
出版狀態	Published - 2006 三月 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/21/3/017

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