@article{73ce99a5998b4bb5bc1ec38f27f702d2,
title = "Epitaxial behavior and interface structures of BSTO thin films",
abstract = "Ferroelectric Ba(1-x)SrxTiO3 (x = 0.5 and 0.25) thin films were grown on (001) LaAlO3 by using pulsed laser ablation. Extensive x-ray diffraction and selected area electron diffraction reveal that the as-grown films were (001) oriented with a good in-plane relationship of 〈100〉BSTO // lang;100〉LAO- Rutherford Backscattering Spectroscopy ion-channeling studies suggested that the films had excellent epitaxial quality and crystallinity with an ion beam minimum yield χmin of only 2.6%. Atomically sharp interfaces were seen by cross-sectional high-resolution electron microscopy, indicated that the density of misfit dislocations was consistent with the lattice mismatch from the theoretical calculation.",
author = "Chen, {C. L.} and Z. Zhang and H. Feng and Luo, {G. P.} and Chen, {S. Y.} and A. Heilman and Chu, {W. K.} and Chu, {C. W.} and J. Gao and B. Rafferty and Pennycook, {S. J.} and Y. Liou and Miranda, {F. A.} and {Van Keuls}, F.",
note = "Funding Information: This work is supported in part by the T. L. L. Temple Foundation, the John J. and R e b aMoores Endowment, and the State of Texas through the Texas Center for Superconductivity at University of Houston. It was also supported in part by the MRSEC program of the National Science Foundation under Award Number DMR-9632667. This research at Oak Ridge National Laboratory was partially sponsored by the Division of Materials Sciences, U.S. Department of Energy, under Contract No. DE-AC05-960R22464w ith Lockheed Martin Energy Research Corporation, and by appointment to the ORNL Postdoctoral Research Program administrated jointly by ORISE and",
year = "2000",
doi = "10.1080/10584580008222235",
language = "English",
volume = "28",
pages = "237--246",
journal = "Integrated Ferroelectrics",
issn = "1058-4587",
publisher = "Taylor and Francis Ltd.",
number = "1-4",
}