Epitaxial behavior and interface structures of BSTO thin films

C. L. Chen, Z. Zhang, H. Feng, G. P. Luo, S. Y. Chen, A. Heilman, W. K. Chu, C. W. Chu, J. Gao, B. Rafferty, S. J. Pennycook, Y. Liou, F. A. Miranda, F. Van Keuls

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Ferroelectric Ba(1-x)SrxTiO3 (x = 0.5 and 0.25) thin films were grown on (001) LaAlO3 by using pulsed laser ablation. Extensive x-ray diffraction and selected area electron diffraction reveal that the as-grown films were (001) oriented with a good in-plane relationship of 〈100〉BSTO // lang;100〉LAO- Rutherford Backscattering Spectroscopy ion-channeling studies suggested that the films had excellent epitaxial quality and crystallinity with an ion beam minimum yield χmin of only 2.6%. Atomically sharp interfaces were seen by cross-sectional high-resolution electron microscopy, indicated that the density of misfit dislocations was consistent with the lattice mismatch from the theoretical calculation.

原文English
頁(從 - 到)237-246
頁數10
期刊Integrated Ferroelectrics
28
發行號1-4
DOIs
出版狀態Published - 2000

All Science Journal Classification (ASJC) codes

  • 控制與系統工程
  • 電子、光磁材料
  • 陶瓷和複合材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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