Perovskite ferroelectric Ba0.5Sr0.5TiO3 grown epitaxially on (001) LaAlO3 substrates by pulsed laser ablation were investigated by X-ray diffraction, rocking curve and pole figure measurements. The films were found to exhibit an (100) orientation normal to the substrate surface with an in-plane relationship of BSTO∥LAO. As evidenced from relatively small full width at half maximum values, a small ion beam minimum yield of 2.6, a small loss tangent, and relatively large dielectric constant, the films were of excellent quality. The room temperature dielectric constant can be changed by as much as 33% by changing the bias from 0-35 V at 1 MHz, opening the possibility for developing room-temperature tunable microwave elements using such films.
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