Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications

C. L. Chen, H. H. Feng, Z. Zhang, A. Brazdeikis, Z. J. Huang, W. K. Chu, C. W. Chu, F. A. Miranda, F. W. Van Keuls, R. R. Romanofsky, Y. Liou

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175 引文 斯高帕斯(Scopus)

摘要

Perovskite ferroelectric Ba0.5Sr0.5TiO3 grown epitaxially on (001) LaAlO3 substrates by pulsed laser ablation were investigated by X-ray diffraction, rocking curve and pole figure measurements. The films were found to exhibit an (100) orientation normal to the substrate surface with an in-plane relationship of [100]BSTO∥[100]LAO. As evidenced from relatively small full width at half maximum values, a small ion beam minimum yield of 2.6, a small loss tangent, and relatively large dielectric constant, the films were of excellent quality. The room temperature dielectric constant can be changed by as much as 33% by changing the bias from 0-35 V at 1 MHz, opening the possibility for developing room-temperature tunable microwave elements using such films.

原文English
頁(從 - 到)412-414
頁數3
期刊Applied Physics Letters
75
發行號3
DOIs
出版狀態Published - 1999 7月 19

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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