TY - CHAP
T1 - Epitaxial Growth of Bi2X3 Topological Insulators
AU - Kou, Xufeng
AU - Wang, Kang L.
N1 - Funding Information:
Acknowledgements This work is supported in part by the FAME Center, one of the six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. We also gratefully acknowledge the financial support from the National Key R&D Program of China, under contract numbers 2017YFB0405704 and 2017YFA0305400. X.F.K. acknowledges the support from the 1000-Young Talent Program of China and the Shanghai Sailing Program under contract number 17YF1429200.
Publisher Copyright:
© 2019, Springer Nature Singapore Pte Ltd.
PY - 2019
Y1 - 2019
N2 - Tetradymite-type Bi2X3 (X = Se, Te, Sb) systems have been used as the best thermoelectric materials for decades. Recently, such V-VI compound materials have attracted immense interests because they are identified as topological insulators with salient features associated with the unique topological surface states. In this chapter, we review the use of molecular beam epitaxy technique to achieve single-crystalline Bi2X3 thin films with atomically smooth surface and extremely low-defect density. In particular, we will explore the unique van der Waals epitaxy growth mechanism, providing detailed discussions on the choice of key growth procedures and parameters during the MBE growth. Furthermore, we will introduce advanced growth techniques such as functional doping and structural engineering so that the functionalities can be further multiplied. Finally, we will give an outlook on Bi2X3-based materials system for exploring new physics and device applications.
AB - Tetradymite-type Bi2X3 (X = Se, Te, Sb) systems have been used as the best thermoelectric materials for decades. Recently, such V-VI compound materials have attracted immense interests because they are identified as topological insulators with salient features associated with the unique topological surface states. In this chapter, we review the use of molecular beam epitaxy technique to achieve single-crystalline Bi2X3 thin films with atomically smooth surface and extremely low-defect density. In particular, we will explore the unique van der Waals epitaxy growth mechanism, providing detailed discussions on the choice of key growth procedures and parameters during the MBE growth. Furthermore, we will introduce advanced growth techniques such as functional doping and structural engineering so that the functionalities can be further multiplied. Finally, we will give an outlook on Bi2X3-based materials system for exploring new physics and device applications.
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U2 - 10.1007/978-981-13-8078-5_14
DO - 10.1007/978-981-13-8078-5_14
M3 - Chapter
AN - SCOPUS:85068787929
T3 - Springer Series in Materials Science
SP - 319
EP - 349
BT - Springer Series in Materials Science
PB - Springer Verlag
ER -