Dielectric Ba0.6Sr0.4TiO3 thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of 〈100〉BSTO//〈100〉MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250° at 23.675 GHz under an electrical field of 40 V/μm and a figure of merit of ∼53°/dB. The performance of the microwave phase shifter based on the epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO is close to that needed for practical applications in wireless communications.
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