Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters

C. L. Chen, J. Shen, S. Y. Chen, G. P. Luo, C. W. Chu, F. A. Miranda, F. W. Van Keuls, J. C. Jiang, E. I. Meletis, H. Y. Chang

研究成果: Article同行評審

161 引文 斯高帕斯(Scopus)

摘要

Dielectric Ba0.6Sr0.4TiO3 thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of 〈100〉BSTO//〈100〉MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250° at 23.675 GHz under an electrical field of 40 V/μm and a figure of merit of ∼53°/dB. The performance of the microwave phase shifter based on the epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO is close to that needed for practical applications in wireless communications.

原文English
頁(從 - 到)652-654
頁數3
期刊Applied Physics Letters
78
發行號5
DOIs
出版狀態Published - 2001 1月 29

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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