Epitaxial SiGeC/Si photodetector with response in the 1.3 - 1.55 μm wavelength range

F. Y. Huang, Shawn G. Thomas, Michael Chu, Kang L. Wang

研究成果: Conference article同行評審

8 引文 斯高帕斯(Scopus)

摘要

We demonstrate a Si-based photodetector with a response in the 1.3-1.55 μm wavelength range. The active absorption layer of the pin photodiode consists of a pseudomorphic SiGeC alloy grown on a Si substrate with a Ge content of 55% and a thickness of 800 angstrom. By using a single-mode fiber butt coupled to the waveguide facet, the external quantum efficiency for a 400-μm long waveguide is 0.2% at 1.55 μm, and 8% at 1.3 μm. The external efficiency can be further improved by using a multiple layer absorber structure. The high efficiency and high speed characteristics together with the low leakage current density imply potential application of the SiGeC/Si photodetector for optical fiber communications and optical interconnects in the 1.3-1.55 μm wavelength range.

原文English
頁(從 - 到)665-668
頁數4
期刊Technical Digest - International Electron Devices Meeting
出版狀態Published - 1996
事件Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
持續時間: 1996 十二月 81996 十二月 11

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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