TY - GEN
T1 - EPITAXY OF ARSENIC-PRESSURE-CONTROLLED MBE-GROWN GaAs LAYERS.
AU - Wang, Y. H.
AU - Liu, W. C.
AU - Chang, C. Y.
AU - Jean, M. S.
AU - Liao, S. A.
PY - 1986
Y1 - 1986
N2 - Surface morphologies of the molecular beam epitaxy (MBE)-grown GaAs layers using the background-arsenic-pressure-control method were investigated. The growth parameters, such as substrate temperature, growth rate, epilayer thickness, As/Ga ratio, doping concentration substrate type, etc. , are related to the observed oval defect density. Protrusions and Ga-droplets caused oval defects during growth. The origin of the oval defects in our system is found to be the gallium oxide, not Ga 'spitting' from the effusion cell.
AB - Surface morphologies of the molecular beam epitaxy (MBE)-grown GaAs layers using the background-arsenic-pressure-control method were investigated. The growth parameters, such as substrate temperature, growth rate, epilayer thickness, As/Ga ratio, doping concentration substrate type, etc. , are related to the observed oval defect density. Protrusions and Ga-droplets caused oval defects during growth. The origin of the oval defects in our system is found to be the gallium oxide, not Ga 'spitting' from the effusion cell.
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M3 - Conference contribution
AN - SCOPUS:0022926873
SN - 0931837219
T3 - Materials Research Society Symposia Proceedings
SP - 49
EP - 54
BT - Materials Research Society Symposia Proceedings
PB - Materials Research Soc
ER -