Er 3+ interlayer energy migration as the limiting photoluminescence quenching factor in nanostructured Er 3+:Y 2O 3 thin films

J. Hoang, Robert N. Schwartz, Kang L. Wang, J. P. Chang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We report the effects of Er 3+ nanostructuring on optical properties of heterogeneously doped Er 3+:Y 2O 3 thin films synthesized by radical enhanced atomic layer deposition. By alternating the cycle sequences of Y 2O 3 and Er 2O 3, rare earth (RE) ion concentrations were controlled from 4.8 to 11.8 at. Er and the local Er 2O 3 thicknesses were varied between 0.7 to 7.6 Å. Photoluminescence (PL) was used to examine the 1535 nm (Er 4I 13/24I 15/2) emission at two excitation wavelengths, 488 nm and 976 nm. The normalized PL increased with increasing Er 3+ concentrations up to 11.8 and 9.6 at. under 488 and 976 nm excitations, respectively. The introduction of a local Er 2O 3 layer greater than 2.4 Å resulted in significant PL quenching, over an order of magnitude, under both excitation wavelengths. The quenching was attributed to enhanced local Er 3+Er 3+ interlayer energy migration. Compared to homogeneously doped RE systems where the RE concentration is directly related to the average RERE spatial distance, increased luminescence was observed at high Er 3+ concentrations in heterogeneously doped systems. These results suggest that controlling the RE proximity is key to engineering the optical properties of RE doped heterogeneous materials.

原文English
文章編號023116
期刊Journal of Applied Physics
112
發行號2
DOIs
出版狀態Published - 2012 七月 15

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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