Erratum: Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor (Applied Physics Letters (2005) 86 (033505))

C. S. Lee; W. C. Hsu

doi:10.1063/1.2033141

Erratum: Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor (Applied Physics Letters (2005) 86 (033505))

微電子工程研究所

研究成果: Comment/debate › 同行評審

原文	English
文章編號	089901
期刊	Applied Physics Letters
卷	87
發行號	8
DOIs	https://doi.org/10.1063/1.2033141
出版狀態	Published - 2005 8月 22

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.2033141

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